首页> 外文OA文献 >Direct observation of dramatically enhanced hole formation in a perovskite-solar-cell material spiro-OMeTAD by Li-TFSI doping
【2h】

Direct observation of dramatically enhanced hole formation in a perovskite-solar-cell material spiro-OMeTAD by Li-TFSI doping

机译:通过Li-TFSI掺杂直接观察钙钛矿太阳能电池材料Spiro-OMeTAD中空穴形成的显着增强

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Electron spin resonance (ESR) spectroscopy of 2,2′,7,7′-tetrakis-(N,N-di-p-methoxyphenylamine)9,9′-spirobifluorene (spiro-OMeTAD) thin films and perovskite (CH3NH3PbI3)/spiro-OMeTAD layered films are reported. Clear ESR signals (g = 2.0030) were observed by adding a dopant lithium bis(trifluoromethanesulfonyl)imide (Li-TFSI) to the spiro-OMeTAD thin films, which directly showed the spin (hole) formation in spiro-OMeTAD by the Li-TFSI doping. The number of spins in the spiro-OMeTAD thin film has increased by more than two orders of magnitude by the Li-TFSI doping under dark conditions, which demonstrates from a microscopic viewpoint that Li-TFSI has high doping effects for the spiro-OMeTAD thin films. Under simulated solar irradiation, the spin density in the spiro-OMeTAD thin films and the perovskite/spiro-OMeTAD layered films largely increased by the Li-TFST doping due to the formation of long-lived holes in spiro-OMeTAD. The transient responses of the number of photogenerated spins, Nspin, of the layered films upon the light irradiation showed the increase and the decrease in the Nspin due to the hole transfer and recombination at the perovskite/spiro-OMeTAD interface. The states of long-lived holes in the spiro-OMeTAD layers were analyzed using the simulation of the ESR spectra, which reveals the mobile photogenerated holes with a lifetime >10 μs.
机译:2,2',7,7'-四-(N,N-二-对甲氧基苯基胺)9,9'-螺双芴(spiro-OMeTAD)薄膜和钙钛矿(CH3NH3PbI3)/的电子自旋共振(ESR)光谱/报道了螺-OMeTAD分层膜。通过向螺旋-OMeTAD薄膜中添加掺杂剂双(三氟甲磺酰基)酰亚胺锂(Li-TFSI)观察到清晰的ESR信号(g = 2.0030),这直接表明Li-在螺旋-OMeTAD中形成自旋(空穴) TFSI掺杂。 Li-TFSI掺杂在黑暗条件下,spiro-OMeTAD薄膜的自旋数增加了两个数量级以上,这从微观角度证明了Li-TFSI对spiro-OMeTAD薄膜具有很高的掺杂效果电影。在模拟太阳辐射下,由于在螺-OMeTAD中形成了长寿命的空穴,因此通过Li-TFST掺杂大大提高了螺-OMeTAD薄膜和钙钛矿/螺-OMeTAD层状膜中的自旋密度。在光辐照下,层状膜的光生自旋数Nspin的瞬态响应表明,由于钙钛矿/螺-OMeTAD界面处的空穴转移和复合,Nspin的增加和减少。使用ESR光谱模拟分析了螺-OMeTAD层中长寿命空穴的状态,揭示了寿命大于10μs的可移动光生空穴。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号